Memory arrays with polygonal memory cells having specific sidewall orientations

摘要

Some embodiments include a memory array having a first series of access/sense lines which extend along a first direction, a second series of access/sense lines over the first series of access/sense lines and which extend along a second direction substantially orthogonal to the first direction, and memory cells vertically between the first and second series of access/sense lines. Each memory cell is uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series. The memory cells have programmable material. At least some of the programmable material within each memory cell is a polygonal structure having a sidewall that extends along a third direction which is different from the first and second directions. Some embodiments include methods of forming memory arrays.

主权项

1. A memory array, comprising:
a first series of access/sense lines extending along a first lateral direction relative to an upper surface of a substrate; a second series of access/sense lines elevationally, over the first series of access/sense lines and extending along a second lateral direction which is substantially orthogonal to the first lateral direction; and memory cells extending vertically upward relative to the upper surface and being disposed between the first and second series of access/sense lines; each memory cell being uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series; the memory cells comprising programmable material; at least some of the programmable material within each memory cell being a polygonal structure having a sidewall that extends along a third lateral direction which is different from the first and second lateral directions.