发明名称 |
SOLID-STATE WAFER BONDING OF FUNCTIONAL MATERIALS ON SUBSTRATES AND SELF-ALIGNED CONTACTS |
摘要 |
A method for integrating III-V semiconductor materials onto a rigid host substrate deposits a thin layer of reactive metal film on the rigid host substrate. The layer can also include a separation layer of unreactive metal or dielectric, and can be patterned. The unreactive metal pattern can create self-aligned device contacts after bonding is completed. The III-V semiconductor material is brought into contact with the thin layer of reactive metal. Bonding is by a low temperature heat treatment under a compressive pressure. The reactive metal and the functional semiconductor material are selected to undergo solid state reaction and form a stable alloy under the low temperature heat treatment without degrading the III-V material. A semiconductor device of the invention includes a functional III-V layer bonded to a rigid substrate via an alloy of a component of the functional III-V layer and a metal that bonds to the rigid substrate. |
申请公布号 |
WO2016073460(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
WO2015US58802 |
申请日期 |
2015.11.03 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
DAYEH, SHADI A.;CHEN, RENJIE |
分类号 |
H01L21/20;H01L21/3213;H01L21/447 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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