Display device

摘要

A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable display device including the transistor is provided. The display device includes a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. The oxide semiconductor layer contains indium, and is in contact with the oxide layer. The oxide layer contains indium, and has a larger energy gap than the oxide semiconductor layer.

主权项

1. A display device comprising:
a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; and a gate electrode overlapping with the multi-layer film with the gate insulating film therebetween, wherein each of the oxide layer and the oxide semiconductor layer contains indium, wherein the oxide layer is directly in contact with the gate insulating film, wherein the oxide semiconductor layer is not directly in contact with the gate insulating film, wherein the oxide semiconductor layer is in contact with the oxide layer, wherein a band gap of the oxide layer is larger than a band gap of the oxide semiconductor layer, and wherein a bottom of a conduction band is gradually decreased from the oxide layer to the oxide semiconductor layer and a top of a valence band is gradually increased from the oxide layer to the oxide semiconductor layer.