| 摘要 |
A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor disposed on the gate insulating layer; a circular drain electrode arranged on the semiconductor; a source electrode disposed on the semiconductor and configured in the shape of a circular band bent in the direction where the drain electrode is disposed; a protective layer disposed on the drain and source electrodes, and having a contact hole through which the drain electrode is partially exposed; and a pixel electrode electrically coupled to the drain electrode through the contact hole. The gate electrode includes a circular portion that is overlapped with the drain electrode, and a circular sector-shaped portion that is overlapped with the source electrode. The protective layer includes a thin film transistor sign having the contact hole exposing the drain electrode in an area where the protective layer and the circular portion are overlapped. |
