| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a transistor driven with high voltage or large current for a display device, which has been required to have higher breakdown voltage.SOLUTION: A semiconductor device comprises a transistor having a semiconductor layer forming a channel formation region and a buffer layer formed between a source electrode layer and a drain electrode layer. The buffer layer is between the semiconductor layer forming the channel formation region and the source electrode layer and the drain electrode layer, and is provided particularly for relaxing the electric field in the vicinity of a drain edge and improving the withstanding voltage of the transistor.SELECTED DRAWING: Figure 1 |
