发明名称 |
METHODS AND SYSTEMS FOR GROWING BINARY, TERNARY AND QUATERNARY MATERIALS ON A SUBSTRATE |
摘要 |
Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods. |
申请公布号 |
WO2016034693(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
WO2015EP70199 |
申请日期 |
2015.09.04 |
申请人 |
AIXTRON SE |
发明人 |
LIU, MING-TE;YANG, LIN;MACK, JERRY;KARIM, ZIA;LU, BRIAN |
分类号 |
C23C16/30;C23C16/44;C23C16/455 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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