发明名称 METHODS AND SYSTEMS FOR GROWING BINARY, TERNARY AND QUATERNARY MATERIALS ON A SUBSTRATE
摘要 Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.
申请公布号 WO2016034693(A1) 申请公布日期 2016.03.10
申请号 WO2015EP70199 申请日期 2015.09.04
申请人 AIXTRON SE 发明人 LIU, MING-TE;YANG, LIN;MACK, JERRY;KARIM, ZIA;LU, BRIAN
分类号 C23C16/30;C23C16/44;C23C16/455 主分类号 C23C16/30
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