DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELECTRIC MATERIAL AND METHOD FOR THE FORMATION THEREOF

摘要

An illustrative device disclosed herein includes a semiconductor substrate. The substrate includes a source region, a drain region and a channel region. The channel region is arranged between the source region and the drain region. A gate insulation layer is provided over the channel region. A floating gate electrode is provided over the gate insulation layer. A layer of a ferroelectric material is provided over the floating gate electrode. A top electrode is provided over the layer of ferroelectric material. A projected area of the top electrode onto a plane that is perpendicular to a thickness direction of the semiconductor substrate is smaller than a projected area of the floating gate electrode onto the plane.

主权项

1. A device, comprising:
a semiconductor substrate comprising a source region, a drain region and a channel region, said channel region being arranged between said source region and said drain region; a gate insulation layer provided over said channel region; a floating gate electrode provided over said gate insulation layer; a layer of a ferroelectric material provided over said floating gate electrode, said layer of ferroelectric material defining a recess; and a top electrode disposed in said recess, wherein a top surface of said top electrode does not extend beyond said recess; wherein a projected area of said top electrode onto a plane that is perpendicular to a thickness direction of said semiconductor substrate is smaller than a projected area of said floating gate electrode onto said plane.