LOW NOISE CDHGTE PHOTODIODE ARRAY

摘要

A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

主权项

1. A planar photodiode array comprising a useful layer made of a cadmium, mercury and tellurium semi-conductor alloy of CdxHg1-xTe type, the useful layer having a lower face and an upper face on the side opposite to the lower face;
wherein:
the useful layer comprises at least two superimposed doped layers, each interface between two adjacent doped layers forming a PN junction which extends over the whole extent of the useful layer;the useful layer has at least one region designated separation region, extending from the upper face of the useful layer to its lower face while going through said PN junction, the separation region separating at least two volumes, designated useful volumes which extend into the useful layer as deeply as the separation region; andbeyond a predetermined depth in the useful layer, the average cadmium concentration in the separation region is greater than the average cadmium concentration in the useful volumes.