发明名称 |
METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER |
摘要 |
<p>The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.</p> |
申请公布号 |
EP2973668(A1) |
申请公布日期 |
2016.01.20 |
申请号 |
EP20140711901 |
申请日期 |
2014.03.05 |
申请人 |
PLASMA-THERM, LLC |
发明人 |
GEERPURAM, DWARAKANATH;PAYS-VOLARD, DAVID;MARTINEZ, LINNELL;JOHNSON, CHRIS;JOHNSON, DAVID;WESTERMAN, RUSSELL |
分类号 |
H01L21/3065;H01J37/32;H01L21/67;H01L21/683;H01L21/687;H01L21/78 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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