| 摘要 |
A data storage circuit of a semiconductor device comprises: a first antifuse which is ruptured for data to be programmed in response to a first access signal, and provides the programmed data to a data node depending on whether the first antifuse has been ruptured; an initialization unit for controlling the voltage level of the data node in response to an initialization flag; and a second antifuse which is ruptured for the initialization flag to be programmed in response to the first access signal, and provides the initialization flag to the initialization unit depending on whether the second antifuse has been ruptured. |
