| 摘要 |
PROBLEM TO BE SOLVED: To suppress voids caused in an insulating film filling between word lines, and to suppress the occurrence of etching residues when word lines are processed. SOLUTION: The semiconductor memory device has: a plurality of word lines 10 formed on a semiconductor substrate 1 and extending in a row direction; a plurality of bit lines (source drain regions) 5 formed on the semiconductor substrate 1 and extending in a column direction; and a plurality of memory elements formed at respective intersections of the plurality of word lines 10 and the plurality of bit lines 5. Each word line 10 constitutes a gate electrode at each memory element, a lower portion of a side surface of each word line 10 in a direction parallel to a direction where the word line 10 extends is perpendicular to a main surface of the semiconductor substrate 1, and an upper portion of the side surface tilts decreasing upward in width. COPYRIGHT: (C)2009,JPO&INPIT
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