METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent any defect from occurring in a semiconductor substrate, in a method of manufacturing a semiconductor device. SOLUTION: The method of manufacturing a semiconductor device includes a step of forming an element isolation groove 20a in a silicon substrate 20; a step of forming an element isolation insulating film 23 in the element isolation groove 20a; a step of injecting impurity into the silicon substrate 20, after the formation of the element isolation insulating film 23; a step of forming a cover film 26 for suppressing warpage of the silicon substrate 20 on respective upper surfaces of the element isolation insulating film 23 and the silicon substrate 20 after the injection of the impurity; and a step of annealing the silicon substrate 20, with the cover film 26 being formed thereon. COPYRIGHT: (C)2011,JPO&INPIT