发明名称 |
Nitride semiconductor light emitting device and fabrication method thereof |
摘要 |
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
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申请公布号 |
US8440996(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201213358034 |
申请日期 |
2012.01.25 |
申请人 |
KANG SANG WON;KIM YONG CHUN;CHO DONG HYUN;OH JEONG TAK;KIM DONG JOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG WON;KIM YONG CHUN;CHO DONG HYUN;OH JEONG TAK;KIM DONG JOON |
分类号 |
H01L29/06;H01L33/22;H01L33/24;H01L33/32 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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