METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device in which alignment accuracy can be improved.SOLUTION: A second alignment mark 2 is formed on a first alignment mark 1 by forming a silicon carbide epitaxial layer 20 on the first alignment mark 1. A carbon silicon substrate 10 is aligned by using the second alignment mark 2. The first alignment mark 1 is composed of an even number of protrusions 1a, in which a width of the protrusion 1a is X along an off-direction a11 that is a projected direction of a <0001> direction onto a principal surface 10a of the substrate, and a distance between two adjoining protrusions 1a is Y. The aligning step includes a step of aligning the silicon carbide substrate 10 to an alignment target 33 in such a manner that a position offset at a distance equal to a half X from the center position 2b of the second alignment mark 2 along the off-direction a11 is aligned to a reference position of the alignment target 33 to be aligned to the silicon carbide substrate 10.