SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

主权项

1. A semiconductor device comprising:
a fin protruding from a substrate and extending in a direction; a recess in the fin; a device isolation layer filling the recess; a dummy gate structure overlapping the device isolation layer; first and second spacers at opposite sides of the dummy gate structure on the fin; an inner spacer on inner sidewalls of the first and second spacers; and a source/drain region at opposite sides of the recess and spaced apart from the device isolation layer.