Method of fabricating a nitride-based semiconductor laser diode

摘要

Provided is a method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate (2) at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along <11-20> direction; growing an n-GaN layer (20) on the GaN substrate (2) between the masks so that two (1-100) edges of the n-GaN layer (20) are thicker than the remaining regions thereof; sequentially stacking an n-clad layer (24), an active layer (26), and a p-clad layer (28) on the n-GaN layer (20) to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer (24) aligned laterally with the active layer (26) and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane (30).