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发明名称
Method for Fabrication poly silicon thin film having low-temperrature using Metal Induced Crystalization method
摘要
申请公布号
KR100504488(B1)
申请公布日期
2005.08.04
申请号
KR20020081327
申请日期
2002.12.18
申请人
发明人
分类号
H01L21/20;(IPC1-7):H01L21/20
主分类号
H01L21/20
代理机构
代理人
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