| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of driving a 1-transistor type DRAM by which the margin of write operation can be improved. SOLUTION: The first hold period in which data is held by deactivating the word line of the NMOS transistor and by pre-charging a source line and a bit line, a complex operation period in which the word line is activated, the source line is shifted to ground voltage, voltage of the bit line is shifted to voltage of a level of the bit out of multi-level, and both of a NMOS transistor component and a bipolar transistor component are operated, a bipolar transistor operation period in which voltage of the word line is shifted to negative voltage and only the bipolar transistor component is operated, and write of data "1" is performed by including a second hold period in which the source line is pre-charged and data is held. COPYRIGHT: (C)2009,JPO&INPIT
|
