发明名称 半導体装置
摘要 The invention provides a semiconductor device and a shift register, in which low noise is caused in a non-selection period and a transistor is not always on. First to fourth transistors are provided. One of a source and a drain of the first transistor is connected to a first wire, the other of the source and the drain thereof is connected to a gate electrode of the second transistor, and a gate electrode thereof is connected to a fifth wire. One of a source and a drain of the second transistor is connected to a third wire and the other of the source and the drain thereof is connected to a sixth wire. One of a source and a drain of the third transistor is connected to a second wire, the other of the source and the drain thereof is connected to the gate electrode of the second transistor, and a gate electrode thereof is connected to a fourth wire. One of a source and a drain of the fourth transistor is connected to the second wire, the other of the source and the drain thereof is connected to the sixth wire, and a gate electrode thereof is connected to the fourth wire.
申请公布号 JP5779628(B2) 申请公布日期 2015.09.16
申请号 JP20130191839 申请日期 2013.09.17
申请人 株式会社半導体エネルギー研究所 发明人 梅崎 敦司
分类号 G11C19/28;G09G3/20;G09G3/36;G11C19/00 主分类号 G11C19/28
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