Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

主权项

1. A semiconductor light emitting device, comprising:
a light emitting layer including an active layer; a light transmitting layer transmittable with respect to light emitted from the light emitting layer, the light transmitting layer being amorphous and including silicon oxide; and a first semiconductor layer of a first conductivity type, the first semiconductor layer including silicon, the first semiconductor layer being provided between the light emitting layer and the light transmitting layer, the first semiconductor layer directly contacting the light transmitting layer, the first semiconductor layer having a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, having a lattice constant smaller than a lattice constant of the active layer, and having a tensile stress in an in-plane direction, wherein the light emitted from the light emitting layer passes through the light transmitting layer and is output to an outside of the semiconductor light emitting device.