High Density Magnetic Random Access Memory

摘要

A method for writing to a magnetic memory comprising: providing a plurality of magnetic tunnel junctions arranged into columns and rows, applying a first current to a first conductive line coupled to a row of magnetic tunnel junctions at their ends adjacent to a free ferromagnetic layer to produce a bias magnetic field; and applying a second current to a second conductive line electrically coupled to a column of magnetic tunnel junctions at their ends adjacent to a pinned ferromagnetic layer to produce a spin momentum transfer in the free ferromagnetic layer of a first magnetic tunnel junction disposed at a first intersection region formed by the first conductive line and the second conductive line; wherein a joint effect of the first and second currents applied simultaneously reverses a magnetization direction of the free ferromagnetic layer of the first magnetic tunnel junction. Other embodiments of the magnetic memory are disclosed.

主权项

1. A method for writing to a magnetic memory comprising:
providing a plurality of magnetic tunnel junctions disposed on a substrate and arranged into columns and rows, each magnetic tunnel junction comprising a free ferromagnetic layer having a reversible magnetization direction directed substantially perpendicular to the substrate in an equilibrium state, a pinned ferromagnetic layer having a fixed magnetization direction directed perpendicular to the substrate, and a tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer; applying a first current to a first conductive line comprising a ferromagnetic cladding and being electrically coupled to a row of magnetic tunnel junctions at their ends adjacent to the free ferromagnetic layer to produce a bias magnetic field along a hard magnetic axis of the free ferromagnetic layer; and applying a second current to a second conductive line electrically coupled to a column of magnetic tunnel junctions at their ends adjacent to the pinned ferromagnetic layer to produce a spin momentum transfer in the free ferromagnetic layer of a first magnetic tunnel junction disposed at a first intersection region formed by the first conductive line and the second conductive line; wherein the first current and the second current are applied simultaneously; whereby a joint effect of the first current and the second current reverses the magnetization direction of the free ferromagnetic layer of the first magnetic tunnel junction.