| 摘要 |
A spall releasing plane 15 is formed in the middle of and embedded within a Group III nitride material layer 14. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions and can be formed by adding impurities during the vapour deposition process. Device layer 16, stressor layer 22 and handle 24 are deposited onto the upper surface of the material layer. An edge exclusion layer 18 and adhesion layer 20 can be added above the device layer to aide in the spalling process. This method overcomes the issue of having a lattice mismatch when using Group III nitride materials, e.g. GaN, AlN, InGaN. |
