III-V FET Device with Overlapped Extension Regions Using Gate Last

摘要

A structure and method for fabricating a III-V compound semiconductor-containing heterostructure field-effect transistor (FET) with self-aligned and overlapped extensions using a gate last process is disclosed. The a III-V compound semiconductor-containing heterostructure field-effect transistor (FET) structure may be formed by forming a III-V compound semiconductor-containing heterostructure having at least one layer; forming a doped contact layer on the III-V compound semiconductor-containing heterostructure; and forming a gate structure having a bottom surface substantially below an upper surface of the III-V compound semiconductor-containing heterostructure and an upper surface above the doped contact layer. An undoped region may be formed below the bottom surface of the T-shaped gate structure on a layer of the III-V compound semiconductor-containing heterostructure.

主权项

1. A semiconductor structure, comprising:
a III-V compound semiconductor-containing heterostructure on a substrate, wherein the III-V compound semiconductor-containing comprises a buffer layer at above the substrate, a channel layer above and in contact with the buffer layer, and a barrier layer above and in contact with the channel layer; an etch stop layer above the barrier layer; a doped contact layer above the etch stop layer; a dielectric layer above the doped contact layer; a gate structure having a lowermost surface that is in contact with, and extends no further than, a lowermost surface of the barrier layer; and gate spacers on an uppermost surface of the barrier layer adjacent to and contacting the gate structure, the gate spacers having a lowermost surface that extends no further than the uppermost surface of the barrier layer.