| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method capable of improving defects of shape of a mask pattern formed by a lithography technology using a self-organization material, at a dry development step.SOLUTION: Diblock copolymer obtained by chemically coupling a PMMA material 204 and a PS material 205 with each other is applied on a processed substrate 102, and then, heat treatment is performed. Thereafter, the PMMA material 204 is removed by dry development to form a mask pattern consisting of the PS material 205. At the dry development, an etching rate for the PMMA material 204 is set 10 or more times the etching rate for the PS material 205, and pulse modulated plasma processing is performed by using a mixed gas containing an oxygen (O) gas. |
