发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion coefficient larger than that of the semiconductor layer; performing thermal treatment; removing the second insulating layer; forming a gate insulating film on the side faces of the narrow portion; forming a gate electrode on the gate insulating film; and forming a source-drain region in the semiconductor layer. |
申请公布号 |
US2015097189(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201414568227 |
申请日期 |
2014.12.12 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Saitoh Masumi;Numata Toshinori;Nakabayashi Yukio |
分类号 |
H01L29/66;H01L29/786 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |