发明名称 Method to produce nanometer-sized features with directed assembly of block copolymers
摘要 Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.
申请公布号 US8999492(B2) 申请公布日期 2015.04.07
申请号 US200812026214 申请日期 2008.02.05
申请人 Micron Technology, Inc. 发明人 Millward Dan B.;Sandhu Gurtej S.
分类号 G03G7/00;B05D5/02;C08F2/46;C03C25/68;G03F7/00;B81C99/00;B82Y10/00;B05D1/28;B82Y30/00;B82Y40/00 主分类号 G03G7/00
代理机构 TraskBritt 代理人 TraskBritt
主权项 1. A method of forming a stamp, comprising: forming a trench in a material overlying a substrate, the trench comprising an unpatterned, neutral wetting floor, opposing preferential wetting ends, and opposing parallel preferential wetting sidewalls separated from one another by a fixed width; chemically modifying a polymer block of a PS-b-PMMA copolymer having an inherent pitch (Lo) equal to a depth of the trench to comprise a thiol functional group or an amine functional group to form a modified PS-b-PMMA copolymer comprising a first polymer block having chemical affinity for and swellable by an ink material and a second polymer block not having chemical affinity for and not swellable by the ink material; filling the trench with the modified PS-b-PMMA copolymer; and annealing the modified PS-b-PMMA copolymer to form a stamping surface comprising an ordered array of polymer domains of the first polymer block in a matrix of the second polymer block.
地址 Boise ID US