发明名称 |
Method to produce nanometer-sized features with directed assembly of block copolymers |
摘要 |
Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided. |
申请公布号 |
US8999492(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US200812026214 |
申请日期 |
2008.02.05 |
申请人 |
Micron Technology, Inc. |
发明人 |
Millward Dan B.;Sandhu Gurtej S. |
分类号 |
G03G7/00;B05D5/02;C08F2/46;C03C25/68;G03F7/00;B81C99/00;B82Y10/00;B05D1/28;B82Y30/00;B82Y40/00 |
主分类号 |
G03G7/00 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A method of forming a stamp, comprising:
forming a trench in a material overlying a substrate, the trench comprising an unpatterned, neutral wetting floor, opposing preferential wetting ends, and opposing parallel preferential wetting sidewalls separated from one another by a fixed width; chemically modifying a polymer block of a PS-b-PMMA copolymer having an inherent pitch (Lo) equal to a depth of the trench to comprise a thiol functional group or an amine functional group to form a modified PS-b-PMMA copolymer comprising a first polymer block having chemical affinity for and swellable by an ink material and a second polymer block not having chemical affinity for and not swellable by the ink material; filling the trench with the modified PS-b-PMMA copolymer; and annealing the modified PS-b-PMMA copolymer to form a stamping surface comprising an ordered array of polymer domains of the first polymer block in a matrix of the second polymer block. |
地址 |
Boise ID US |