METHOD FOR STABILIZING AN INTERFACE POST ETCH TO MINIMIZE QUEUE TIME ISSUES BEFORE NEXT PROCESSING STEP

摘要

Methods for etching a dielectric barrier layer disposed on the substrate using a low temperature etching process along with a subsequent interface protection layer deposition process are provided. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes transferring a substrate having a dielectric barrier layer disposed thereon into an etching processing chamber, performing a treatment process on the dielectric barrier layer, remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the treated dielectric barrier layer disposed on the substrate, plasma annealing the dielectric barrier layer to remove the dielectric barrier layer from the substrate, and forming an interface protection layer after the dielectric barrier is removed from the substrate.

主权项

1. A method for etching a dielectric barrier layer disposed on a substrate, comprising:
transferring a substrate having a dielectric barrier layer disposed thereon into an etching processing chamber; performing a treatment process on the dielectric barrier layer; remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the treated dielectric barrier layer disposed on the substrate; plasma annealing the dielectric barrier layer to remove the dielectric barrier layer from the substrate; and forming an interface protection layer after the dielectric barrier is removed from the substrate.