发明名称 SUBSTRATE PROCESSING DEVICE, GAS-PURGING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM CONTAINING ANOMALY-PROCESSING PROGRAM
摘要 This invention minimizes the exposure, to the atmosphere, of a substrate inside a substrate-accommodating carrier. This substrate processing device is designed so as to be provided with a processing chamber, a carrier-placement part on which a carrier is placed, a carrier opener that opens and closes a door on the carrier placed on the carrier-placement part, a purge-gas supply unit that supplies an inert gas to the interior of the carrier, and a control unit that controls the substrate processing device so as to perform at least one of the following inert-gas purges: a load purge, namely an inert-gas purge in which the inert gas is supplied to the interior of the carrier for a prescribed length of time immediately after the carrier door is opened; an unload purge, namely an inert-gas purge in which the inert gas is supplied to the interior of the carrier for a prescribed length of time immediately before a substrate that was processed in the processing chamber is stored inside the carrier and the carrier door is closed; and a standby purge, namely an inert-gas purge in which the inert gas is supplied to the interior of the carrier during a standby time period between a load-purge time period and an unload-purge time period.
申请公布号 WO2015005192(A1) 申请公布日期 2015.01.15
申请号 WO2014JP67669 申请日期 2014.07.02
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 NAKAGAWA, YOSHIHIKO;KOTANI, HIROSHI
分类号 H01L21/677;H01L21/02 主分类号 H01L21/677
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