| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitrogen doped epitaxial wafer for preventing an epitaxial defect from occurring at a straight body in the vicinity of a tail section. <P>SOLUTION: When a silicon single crystal which has been nitrogen doped by the CZ method is lifted, the rate of a lifting speed V[mm/min] to an average temperature gradient G [°C/mm] in a crystal growth axial direction ranging from a melting point to 1,350°C is set to V/G [mm<SP POS="POST">2</SP>/°Cmin]≥0.25, and the cooling speed of a temperature range from 800 to 750°C is set to Cv≥1.7°C/min. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
