发明名称 |
INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS |
摘要 |
An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements. |
申请公布号 |
WO2014124041(A3) |
申请公布日期 |
2015.01.08 |
申请号 |
WO2014US14926 |
申请日期 |
2014.02.05 |
申请人 |
GUERRERA, STEPHEN ANGELO;AKINWANDE, AKINTUNDE I. |
发明人 |
GUERRERA, STEPHEN ANGELO;AKINWANDE, AKINTUNDE I. |
分类号 |
H01J37/073 |
主分类号 |
H01J37/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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