| 发明名称 |
SYSTEMS AND METHODS FOR FABRICATING GATE STRUCTURES FOR SEMICONDUCTOR DEVICES |
| 摘要 |
A method includes providing a gate structure with at least one side wall and a bottom. At least one first spacer layer is formed over the at least one side wall. An offset spacer layer is formed over the at least one first spacer layer and the bottom. A bottom portion of the offset spacer layer is selectively removed to expose the bottom. |
| 申请公布号 |
US2014357073(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313909184 |
申请日期 |
2013.06.04 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
MO Hongxiang;KIM Nam Sung |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
providing a gate structure with at least one sidewall and a bottom; forming at least one first spacer layer over the at least one sidewall; forming an offset spacer layer over the at least one first spacer layer and the bottom; and selectively removing a bottom portion of the offset spacer layer to expose the bottom. |
| 地址 |
Grand Cayman KY |
