| 摘要 |
The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, comprising a copper core (2) with a surface and coating layer(3) superimposed over the surface of the copper core (2), wherein the coating layer (3) comprises aluminium, wherein the ratio of the thickness of the coating layer (3) to the diameter of the copper core (2) is in the range of from 0.05 to 0.2 µm, wherein the ratio of the standard deviation of the diameter of the copper core (2) to the diameter of the copper core (2) is in the range of from 0.005 to 0.05 µm and wherein the ratio of the standard deviation of the thickness of the coating layer (3) to the thickness of the coating layer (3) is in the range of from 0.05 to 0.4 µm, wherein the wire has a diameter in the range of from 100 µm to 600 µm. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge bonding. |
