| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a novel migration suppression structure.SOLUTION: A semiconductor light-emitting element includes: an optical semiconductor laminate including a stack of a first semiconductor layer, an active layer, and a second semiconductor layer in this order; and a second electrode disposed on the second semiconductor layer of the optical semiconductor laminate, being spaced apart from the second semiconductor layer in a peripheral region in a surface of the second electrode, being in contact with the second semiconductor layer in a region except for the peripheral region in the surface of the second electrode, and containing at least Ag; a first transparent insulating layer disposed between the peripheral region of the second electrode and the second semiconductor layer of the optical semiconductor laminate, and having light transmissivity and electrical insulation properties; and a second transparent insulating layer disposed so as to cover the second electrode, wrapping the peripheral region of the second electrode with the first transparent insulating layer, and having light transmissivity and electrical insulation properties. |
