| 摘要 |
<p>The present invention relates to a precursor compound containing a group 4 transition metal, a method for preparing the precursor compound, a precursor composition for depositing a thin film, including the precursor compound, and a method for depositing the thin film using the precursor compound. When using the precursor compound containing the group 4 transition metal, the present invention can form a thin film including an oxide of the group 4 transition metal with uniform thickness on a surface having high aspect ratio by using metal-organic chemical vapor deposition at a high temperature or atomic layer deposition. Also, recording density of semiconductor DRAM can be improved by using the thin film to manufacture of the semiconductor DRAM.</p> |
