发明名称 |
CONTROL APPARATUS AND METHOD FOR RADICALS OF PLASMA |
摘要 |
The present invention relates to an apparatus and a method to control plasma radicals. According to the present invention, the apparatus to control plasma radicals includes: a chamber, a plasma generating unit which forms the plasma in the chamber, and a radical control unit which changes the electronic temperature of the plasma formed in the chamber. According to this configuration, the radical is independently controlled without changing the plasma density. |
申请公布号 |
KR20140119341(A) |
申请公布日期 |
2014.10.10 |
申请号 |
KR20130034081 |
申请日期 |
2013.03.29 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
CHUNG, CHIN WOOK;LEE, HYO CHANG |
分类号 |
H05H1/24;H05H1/46 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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