发明名称 CONTROL APPARATUS AND METHOD FOR RADICALS OF PLASMA
摘要 The present invention relates to an apparatus and a method to control plasma radicals. According to the present invention, the apparatus to control plasma radicals includes: a chamber, a plasma generating unit which forms the plasma in the chamber, and a radical control unit which changes the electronic temperature of the plasma formed in the chamber. According to this configuration, the radical is independently controlled without changing the plasma density.
申请公布号 KR20140119341(A) 申请公布日期 2014.10.10
申请号 KR20130034081 申请日期 2013.03.29
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 CHUNG, CHIN WOOK;LEE, HYO CHANG
分类号 H05H1/24;H05H1/46 主分类号 H05H1/24
代理机构 代理人
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