Deep well structures with single depth shallow trench isolation regions

摘要

A method of forming a semiconductor device includes defining a first type region and a second type region in a substrate, t separated by one or more inter-well STI structures; etching and filling, in at least one of the first type region and the second type region, one or more intra-well STI structures for isolating semiconductor devices formed within a same polarity well, wherein the one or more inter-well STI structures are formed at a substantially same depth with respect to the one or more intra-well STI structures; implanting, a main well region, wherein a bottom of the main well region is disposed above a bottom of the one or more inter-well and intra-well STI features; and implanting, one or more deep well regions that couple main well regions, wherein the one or more deep well regions are spaced away from the one or more inter-well STI structures.

主权项

1. A method of forming a semiconductor device, the method comprising:
defining a first type region and a second type region in a substrate, the first type region and second type region separated by one or more inter-well shallow trench isolation (STI) structures; etching and filling, in at least one of the first type region and the second type region, one or more intra-well STI structures for isolating semiconductor devices formed within a same well, wherein the one or more inter-well STI structures are formed at a substantially same depth with respect to the one or more intra-well STI structures; implanting, in the at least one of the first type region and the second type region, a main well region, wherein a bottom of the main well region is disposed above a bottom of the one or more inter-well and intra-well STI features; implanting, in the at least one of the first type region and the second type region, one or more deep well regions that couple main well regions otherwise isolated by the one or more intra-well STI structures, wherein the one or more deep well regions are spaced away from the one or more inter-well STI structures; and forming the one or more deep well regions by shallow ion implantation through open trenches of the one or more intra-well STI structures, such that the one or more deep well regions are localized at sidewall and bottom surfaces of the one or more intra-well STI structures.