| 摘要 |
PROBLEM TO BE SOLVED: To protect a silicon die and a sensing circuit formed on the silicon die, from damaging effects of pressure media such as corrosion and humidity leading to current leakage.SOLUTION: A pressure sensor 100 comprises: a housing having a high side input port 102 and a low side input port 104 which allow high pressure media and low pressure media to enter respectively when the housing is placed in an environment containing high and low pressure media; a substrate 126 mounted within the housing; a stress isolation member 114 mounted to the substrate; a two-layer die stack 113 having a first sensor die 110 and a second sensor die 112 which are bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces of the substrate, the stress isolation member, and the die stack, which are exposed to the low side input port; and a high side atomic layer deposition (ALD) applied to surfaces of the stress isolation member and the die stack, which are exposed to the high side input port. |
