| 发明名称 | Time-related temperature variation transducer, electronic chip incorporating this transducer and method of fabrication of this chip | ||
| 摘要 | A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress. | ||
| 申请公布号 | US8801274(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201113101478 | 申请日期 | 2011.05.05 |
| 申请人 | Commissariat a l'Energie Atomique et aux Energies Alternatives | 发明人 | Mainguet Jean-Francois;Chambron Alain;Charrat Bruno;Defay Emmanuel;Parat Guy-Michel |
| 分类号 | G01K3/04;G01K7/00;G01J5/10 | 主分类号 | G01K3/04 |
| 代理机构 | Occhiuti & Rohlicek LLP | 代理人 | Occhiuti & Rohlicek LLP |
| 主权项 | 1. A transducer for transducing time-related temperature variations into a difference in potentials, the transducer comprising: an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, at least one layer of pyroelectric material directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress, wherein the pyroelectric material is based on a III-V nitride. | ||
| 地址 | Paris FR | ||