High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same

摘要

Embodiments of methods and apparatus are disclosed for obtaining an imaging array or a digital radiographic system including a plurality of pixels where at least one pixel can include a scan line, a bias line, a switching element including a first terminal, a second terminal, and a control electrode where the control electrode is electrically coupled to the scan line; and a photoelectric conversion element including a first terminal electrically coupled to the bias line and a second terminal electrically coupled to the first terminal of the switching element, and a signal storage element formed in the same layers as the scan line, bias line, the data line, the switching element and the photoelectric conversion element. An area of one terminal of the signal storage element can be larger than a surface area of the pixel.

主权项

1. A pixel, comprising:
a scan line proximate to a first surface of a substrate; a bias line between the first surface of the substrate and a first terminal of a photoelectric conversion element, a switching element proximate to the first surface of the substrate and aligned with at least a portion of the scan line, comprising:
a first terminal;a second terminal; anda gate electrode electrically coupled to the scan line, wherein the first terminal of the switching element and the second terminal of the switching element are electrically coupled based on a scan signal from the scan line; the photoelectric conversion element proximate to the first surface of the substrate, comprising:
the first terminal of the photoelectric conversion element electrically coupled to the bias line; anda second terminal of the photoelectric conversion element electrically coupled to the first terminal of the switching element; and a signal storage element proximate to the first surface of the substrate, comprising:
a first terminal of the signal storage element electrically coupled to the bias line; anda second terminal of the signal storage element electrically coupled to the first terminal of the switching element and aligned with at least a portion of the photoelectric conversion element;a dielectric layer in proximate to the first terminal of the signal storage element and the second terminal of the signal storage element,where the scan line, the bias line and the gate electrode of the switching element are in a first metal layer proximate to the first surface of the substrate.