SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AND METHOD OF FABRICATING THE SAME

摘要

A SiC trench gate transistor with segmented field shielding region is provided. A drain region of a first conductivity type is located in a substrate. A first drift layer of the first conductivity type is located on the substrate and a second drift layer of the first conductivity type is located on the first drift layer. A base region of a second conductivity type is located on the second drift layer. A gate trench is located between the adjacent base regions. A plurality of segmented field shielding regions of the second conductivity type is placed under a bottom of the gate trench and the space between segmented field shielding regions is the first drift region. A gate dielectric layer is located on a bottom and at a sidewall of the gate trench and a trench gate is formed in the gate trench.

主权项

1. A trench gate transistor with segmented field shielding region, comprising:
a drain region, being of a first conductivity type, and located in a substrate; a first drift layer, being of the first conductivity type, and located on the substrate; a second drift layer, being of the first conductivity type, and located on the first drift layer a plurality of base regions, being of a second conductivity type, and located on the second drift layer, wherein a plurality of gate trenches are located between the base regions; a plurality of source regions, being of the first conductivity type, and disposed in the base regions and located adjacent to sidewalls of the gate trenches; a plurality of body regions, being of the second conductivity type, and disposed in the base regions; a plurality of segmented field shielding regions, being of the second conductivity type, and disposed under a bottom of the gate trenches; a plurality of gate dielectric layers, disposed on the bottom and at the sidewall of the gate trench; and a plurality of trench gates, located in the gate trenches.