| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a barrier film excellent in migration suppression with high yield at the time of forming a contact with a dissimilar metal on wiring which contains copper.SOLUTION: In a semiconductor device manufacturing method, a barrier film including a lamination structure of tantalum films and tantalum oxide films is used as a barrier film to be formed on conductive wiring. In particular, in the case of forming a contact 18 including a tungsten plug 17 on copper wiring 14, a barrier film 16 which includes a lamination structure including a tantalum film 161, a tantalum oxide film 162 and a titanium film (or titanium oxide film) 163.</p> |
