发明名称 INDIUM TARGET AND PRODUCTION METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a novel indium target capable of excellently suppressing abnormal discharge at a sputtering time or generation of particles in a formed film, and to provide a production method thereof.SOLUTION: An indium target including a 500/g or less inclusion having the particle diameter in the range of 5.0μm or more to 20μm or less is provided.</p>
申请公布号 JP2014084511(A) 申请公布日期 2014.05.12
申请号 JP20120235806 申请日期 2012.10.25
申请人 JX NIPPON MINING &amp, METALS CORP 发明人 ENDO YOSUKE
分类号 C23C14/34 主分类号 C23C14/34
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