摘要 |
<p>PROBLEM TO BE SOLVED: To provide a novel indium target capable of excellently suppressing abnormal discharge at a sputtering time or generation of particles in a formed film, and to provide a production method thereof.SOLUTION: An indium target including a 500/g or less inclusion having the particle diameter in the range of 5.0μm or more to 20μm or less is provided.</p> |