| 摘要 |
In one example, the method includes forming a hard mask layer above a semiconducting substrate, forming a patterned spacer mask layer above the hard mask layer, wherein the patterned spacer mask layer is comprised of a plurality of first spacers, second spacers and third spacers, and performing a first etching process on the hard mask layer through the patterned spacer mask layer to define a patterned hard mask layer. The method also includes performing a second etching process through the patterned hard mask layer to define a plurality of first fins, second fins and third fins in the substrate, wherein the first fins have a width that corresponds approximately to a width of the first spacers, the second fins have a width that corresponds approximately to a width of the second spacers, and the third fins have a width that corresponds approximately to a width of the third spacers. |
