发明名称 Chemically amplified positive photoresist composition and pattern forming method using the same
摘要 A chemically amplified positive photoresist composition is provided to prevent particles or foreign materials from being re-adsorbed on a substrate by using an organic solvent in a photolithography process, thereby forming the profile without development defects. A chemically amplified positive photoresist composition comprises (A) a resin which is inherent insoluble or sparingly soluble in alkali water solution, and however, is soluble to the alkali water solution after the functional group unstable to an acid is dissociated by the action of acid, (B) a photoacid generator, (C) a solvent consisting of a first organic solvent and a second organic solvent having different specific gravities and boiling points.
申请公布号 KR101363842(B1) 申请公布日期 2014.02.14
申请号 KR20070045052 申请日期 2007.05.09
申请人 发明人
分类号 G03F7/039 主分类号 G03F7/039
代理机构 代理人
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