发明名称 |
Passivation layer for semiconductor devices |
摘要 |
An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1. |
申请公布号 |
US8643151(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113036897 |
申请日期 |
2011.02.28 |
申请人 |
LIU JEN-HAO;NI CHYI-TSONG;LIN HSIAO-YIN;LIN CHUNG-MIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU JEN-HAO;NI CHYI-TSONG;LIN HSIAO-YIN;LIN CHUNG-MIN |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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