发明名称 |
MULTI-ELEMENTS-DOPED ZINC OXIDE FILM, MANUFACTURING METHOD AND APPLICATION THEREOF |
摘要 |
<p>The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga 2 O 3 , Al 2 O 3 , SiO 2 and ZnO according to the following percentage by mass: 0.5%ˆ¼10 % of Ga 2 O 3 , 0.5%ˆ¼5 % of Al 2 O 3 , 0.5 % ˆ¼1.5 % of SiO 2 , and the residue of ZnO; (2)sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2Paˆ¼5Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15sccmˆ¼25sccm, adopting a sputtering power of 40Wˆ¼200W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.</p> |
申请公布号 |
EP2690192(A1) |
申请公布日期 |
2014.01.29 |
申请号 |
EP20110862536 |
申请日期 |
2011.03.25 |
申请人 |
OCEAN'S KING LIGHTING SCIENCE&TECHNOLOGY CO., LTD. |
发明人 |
ZHOU, MINGJIE;WANG, PING;CHEN, JIXING;HUANG, HUI |
分类号 |
C23C14/08;C04B35/453;C23C14/35 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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