发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING SYSTEM
摘要 <p>Cracks are prevented from being prevented on a single crystal substrate. The single crystal substrate (2) having contact areas (10a, 10b, 10c) at the outer surface of the top is loaded on a support board (1) while the crystal orientation of the single crystal substrate (2) is maintained. A linear contact surface of each contact pin (3a, 3b, 3c) is in contact with the contact areas (10a, 10b, 10c) of the outer surface of the single crystal substrate (2) loaded on the support board (1). The longitudinal direction of the contact surface of all contact pins (3a, 3b, 3c) is not parallel to the top and intersection lines (9a, 9b) of the cleavage surface of the single crystal substrate (2).</p>
申请公布号 KR20130135041(A) 申请公布日期 2013.12.10
申请号 KR20130028411 申请日期 2013.03.18
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 MAEDA KAZUHIRO;NISHIZAWA KOICHIRO
分类号 H01L21/683 主分类号 H01L21/683
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