| 摘要 |
A method, apparatus, and manufacture for a memory device is provided. The memory device includes a memory cell region including sectors, where each sector includes memory cells. The memory device further includes a memory controller that is configured to control program operations and erase operations to the memory cells. During erase operations to the memory cells, pre-programming occurs in which each un-programmed memory cell in the sector being erased is programmed by applying at least one programming pulse at a program voltage until a program verify passes. Then, the program voltage is adjusted based on the number of programming pulses applied until the program-verify passed. During subsequent program operations in that sector, programming pulses are applied with the adjusted program voltage. |
