发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a processing apparatus which unfailingly performs etching processing on a surface of a semiconductor wafer with an etchant.SOLUTION: A substrate processing apparatus includes: a first nozzle body 25 supplying an etchant E to a plate surface of a semiconductor wafer W; a thickness detection sensor 29 detecting a thickness of the semiconductor wafer etched with the etchant; a control device interrupting the etching with the etchant when abnormality is detected in the thickness of the semiconductor wafer which is detected by the thickness detection sensor; and a polishing body 27 processing the plate surface of the semiconductor wafer into a roughened surface when the etching with the etchant is interrupted. |
申请公布号 |
JP2013153141(A) |
申请公布日期 |
2013.08.08 |
申请号 |
JP20120263347 |
申请日期 |
2012.11.30 |
申请人 |
SHIBAURA MECHATRONICS CORP |
发明人 |
HAYASHI KONOSUKE;MATSUI EMI;OTAGAKI TAKASHI;HIMORI YOSUKE |
分类号 |
H01L21/306;H01L21/304 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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