发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a processing apparatus which unfailingly performs etching processing on a surface of a semiconductor wafer with an etchant.SOLUTION: A substrate processing apparatus includes: a first nozzle body 25 supplying an etchant E to a plate surface of a semiconductor wafer W; a thickness detection sensor 29 detecting a thickness of the semiconductor wafer etched with the etchant; a control device interrupting the etching with the etchant when abnormality is detected in the thickness of the semiconductor wafer which is detected by the thickness detection sensor; and a polishing body 27 processing the plate surface of the semiconductor wafer into a roughened surface when the etching with the etchant is interrupted.
申请公布号 JP2013153141(A) 申请公布日期 2013.08.08
申请号 JP20120263347 申请日期 2012.11.30
申请人 SHIBAURA MECHATRONICS CORP 发明人 HAYASHI KONOSUKE;MATSUI EMI;OTAGAKI TAKASHI;HIMORI YOSUKE
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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