发明名称 Integrated Circuit and Manufacturing Method
摘要 Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.
申请公布号 US2013193417(A1) 申请公布日期 2013.08.01
申请号 US201313745918 申请日期 2013.01.21
申请人 NXP B. V.;NXP B. V. 发明人 PONOMAREV YOURI VICTOROVITCH;TIO CASTRO DAVID;DAAMEN ROEL
分类号 H01L51/42;H01L51/00 主分类号 H01L51/42
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